KM4953JM
    
    -30VDualP-ChannelEnhancement-ModeMOSFET
    GeneralDescription
    ●RDS(on)=60mΩ@VGS=-10V/ID=-5.3A
    ●RDS(on)=90mΩ@VGS=-4.5V/ID=-4.2A
    ●LowGatecharge
    ●Fastswitchingspeed
    ●HighdensitycelldesignforultralowOn-Resistance
    ●Application:Switchingapplication/Powermanagement
    指纹识别电路的电源驱动
    
    典型封装:SOP-8