KM6968EHM

20V Dual N-Channel Enhancement-Mode MOSFET
General Description
●RDS(on) = 24mΩ @VGS = 4.5V/ ID= 6.5A
●RDS(on) = 32mΩ @VGS = 2.5V/ ID= 5.5A
●ESD protected 2000V
●Low Gate charge
●High density cell design for ultra low On-Resistance
●Application: Switching application / Power management
               锂离子电池保护板电源驱动
典型封装: TSSOP-8