KM8205GH

20V Dual N-Channel Enhancement-Mode MOSFET
General Description
●RDS(on) = 30mΩ @VGS = 4.5V/ ID= 4A
●RDS(on) = 45mΩ @VGS = 2.5V/ ID= 3A
●Low Gate charge
●Fast switching speed
●High density cell design for ultra low On-Resistance
●Application: Switching application / Power management
               锂离子电池保护板电源驱动

典型封装: TSSOP-8,SOT-126